BARE DIE & WAFER INVENTORY
SIGC100T60R3E
- Manufacturer
- Infineon
- Format
- Die
- Dimensions
- On request
IGBT
Parameters
Selection guide reference: SIGC100T60R3E
IGBT
| Parameter / condition / unit | Guide value |
|---|---|
| VCES(V) | 600.0V |
| IC@25C(A) | 200.0A |
| VCE(ON)@ 25C Typ(V) | 1.85V |
| kHz | 5.0V |
| kHz | - |