BARE DIE & WAFER INVENTORY
SC200H100S6B
- Manufacturer
- VISHAY
- Format
- Die & Wafer
- Dimensions
- 200 × 200 mil (guide)
Schottky Diode
Parameters
Selection guide reference: SC200H100A/S
Schottky Diode
| Parameter / condition / unit | Guide value |
|---|---|
| Max Reverse Voltage · VRM · (V) | 100 |
| Max Forward Current · IO · (A) | 60 |
| Peak Forward Surge Current · IFSM · (A) | 860 |
| Max Forward Voltage · VFM@IO · 25°C(V) | 0.87 |
| Max Forward Voltage · VFM@IO · 150°C(V) | 0.72 |
| Reverse Leakage Current · IRM@VRM · 25°C (μA) | 1000 |
| Reverse Leakage Current · IRM@VRM · 150°C (mA) | 24 |
| Max Junction Capacity · CT · (pF) | 1500 |
| Max Junction Temperature · TJ · (°C) | 175 |