BARE DIE & WAFER INVENTORY
LND150ND
- Manufacturer
- Microchip
- Format
- Die
- Dimensions
- 30 × 30 mil (guide)
Depletion-Mode MOSFET
Parameters
Selection guide reference: LND150
Depletion-Mode MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-to-Source Breakdown Voltage · BVDSS · (V) | 500 |
| Static Drain-Source On-State Resistance · RDS(on) · (Ω) | 1000 |
| Continuous Drain Current · ID · 25℃ (A) | - |
| Continuous Drain Current · ID · 100℃(A) | - |
| Gate-to-Source Off Voltage · VGS(off) · Min (V) | -1 |
| Gate-to-Source Off Voltage · VGS(off) · Max (V) | -3 |
| Input Capacitance · CISS · (pF) | 7.5 |
| Junction Temperature · TJ · (℃) | 150 |