BARE DIE & WAFER INVENTORY
IRLC3705N
- Manufacturer
- IR
- Format
- Die
- Dimensions
- 185 × 170 mil (guide)
Logic Level MOSFET
Parameters
Selection guide reference: IRLC3705N
Logic Level MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-to-Source Breakdown Voltage · BVDSS · (V) | 55 |
| Static Drain-to-Source On-State Resistance · RDS(on) · (Ω) | 0.01 |
| Continuous Drain Current · ID · 25℃(A) | 89 |
| Continuous Drain Current · ID · 100℃(A) | 63 |
| Gate-Source Threshold Voltage · VGS(th) · Min(V) | 1 |
| Gate-Source Threshold Voltage · VGS(th) · Max(V) | 2 |
| Total Gate Charge · QG · Max(nc) | 98 |
| Input Capacitance · CISS · (pF) | 3600 |
| Junction Temperature · TJ · (℃) | 175 |