BARE DIE & WAFER INVENTORY
IRLC120NB
- Manufacturer
- IR
- Format
- Die & Wafer
- Dimensions
- 69 × 91 mil (guide)
Logic Level MOSFET
Parameters
Selection guide reference: IRLC120N
Logic Level MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-to-Source Breakdown Voltage · BVDSS · (V) | 100 |
| Static Drain-to-Source On-State Resistance · RDS(on) · (Ω) | 0.185 |
| Continuous Drain Current · ID · 25℃(A) | 10 |
| Continuous Drain Current · ID · 100℃(A) | 7 |
| Gate-Source Threshold Voltage · VGS(th) · Min(V) | 1 |
| Gate-Source Threshold Voltage · VGS(th) · Max(V) | 2 |
| Total Gate Charge · QG · Max(nc) | 20 |
| Input Capacitance · CISS · (pF) | 440 |
| Junction Temperature · TJ · (℃) | 175 |