BARE DIE & WAFER INVENTORY
IRLC014N
- Manufacturer
- IR
- Format
- Die & Wafer
- Dimensions
- 86 × 76 mil / 41 × 70 mil (guide)
Logic Level MOSFET
Parameters
Selection guide reference: IRLC014B
Logic Level MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-to-Source Breakdown Voltage · BVDSS · (V) | 60 |
| Static Drain-to-Source On-State Resistance · RDS(on) · (Ω) | 0.28 |
| Continuous Drain Current · ID · 25℃(A) | 7.7 |
| Continuous Drain Current · ID · 100℃(A) | 4.9 |
| Gate-Source Threshold Voltage · VGS(th) · Min(V) | 1 |
| Gate-Source Threshold Voltage · VGS(th) · Max(V) | 2 |
| Total Gate Charge · QG · Max(nc) | 8.4 |
| Input Capacitance · CISS · (pF) | 400 |
| Junction Temperature · TJ · (℃) | 150 |
Selection guide reference: IRLC014N
Logic Level MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-to-Source Breakdown Voltage · BVDSS · (V) | 50 |
| Static Drain-to-Source On-State Resistance · RDS(on) · (Ω) | 0.13 |
| Continuous Drain Current · ID · 25℃(A) | 3 |
| Continuous Drain Current · ID · 100℃(A) | 2.3 |
| Gate-Source Threshold Voltage · VGS(th) · Min(V) | 1 |
| Gate-Source Threshold Voltage · VGS(th) · Max(V) | 3 |
| Total Gate Charge · QG · Max(nc) | 30 |
| Input Capacitance · CISS · (pF) | 290 |
| Junction Temperature · TJ · (℃) | 150 |