BARE DIE & WAFER INVENTORY
IRFC9130B
- Manufacturer
- IR
- Format
- Die
- Dimensions
- 114 × 180 mil / 120 × 108 mil (guide)
P-Channel MOSFET
Parameters
Selection guide reference: IRFC9130B
P-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | -100 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.3 |
| Continuous Drain Current · ID · 25℃ (A) | -12 |
| Continuous Drain Current · ID · 100℃(A) | -8.2 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | -2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | -4 |
| Total Gate Charge · QG · Max (nc) | 38 |
| Input Capacitance · CISS · (pF) | 860 |
| Junction Temperature · TJ · (℃) | 175 |
Selection guide reference: IRFC9130N
P-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | -100 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.205 |
| Continuous Drain Current · ID · 25℃ (A) | -13 |
| Continuous Drain Current · ID · 100℃(A) | -8.2 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | -2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | -4 |
| Total Gate Charge · QG · Max (nc) | 58 |
| Input Capacitance · CISS · (pF) | 760 |
| Junction Temperature · TJ · (℃) | 150 |