BARE DIE & WAFER INVENTORY
IRFC9120NB
- Manufacturer
- IR
- Format
- Die & Wafer
- Dimensions
- 95 × 114 mil / 69 × 91 mil (guide)
P-Channel MOSFET
Parameters
Selection guide reference: IRFC9120B
P-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | -100 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.6 |
| Continuous Drain Current · ID · 25℃ (A) | -5.6 |
| Continuous Drain Current · ID · 100℃(A) | -3.6 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | -2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | -4 |
| Total Gate Charge · QG · Max (nc) | 18 |
| Input Capacitance · CISS · (pF) | 390 |
| Junction Temperature · TJ · (℃) | 150 |
Selection guide reference: IRFC9120N
P-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | -100 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.48 |
| Continuous Drain Current · ID · 25℃ (A) | -6.6 |
| Continuous Drain Current · ID · 100℃(A) | -4.2 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | -2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | -4 |
| Total Gate Charge · QG · Max (nc) | 27 |
| Input Capacitance · CISS · (pF) | 350 |
| Junction Temperature · TJ · (℃) | 150 |