BARE DIE & WAFER INVENTORY
IRFC5305B
- Manufacturer
- IR
- Format
- Wafer
- Dimensions
- 110 × 140 mil (guide)
P-Channel MOSFET
Parameters
Selection guide reference: IRFC5305B
P-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | -55 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.06 |
| Continuous Drain Current · ID · 25℃ (A) | -31 |
| Continuous Drain Current · ID · 100℃(A) | -22 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | -2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | -4 |
| Total Gate Charge · QG · Max (nc) | 63 |
| Input Capacitance · CISS · (pF) | 1200 |
| Junction Temperature · TJ · (℃) | 175 |