BARE DIE & WAFER INVENTORY
IRFC4332EB
- Manufacturer
- IR
- Format
- Die & Wafer
- Dimensions
- 175 × 290 mil (guide)
N-Channel MOSFET
Parameters
Selection guide reference: IRFC4332
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 250 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.029 |
| Continuous Drain Current · ID · 25℃ (A) | 60 |
| Continuous Drain Current · ID · 100℃(A) | 42 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 3 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 5 |
| Total Gate Charge · QG · Max (nc) | 150 |
| Input Capacitance · CISS · (pF) | 5860 |
| Junction Temperature · TJ · (℃) | 175 |