BARE DIE & WAFER INVENTORY
IRFC430AB
- Manufacturer
- VISHAY
- Format
- Wafer
- Dimensions
- 115 × 175 mil (guide)
N-Channel MOSFET
Parameters
Selection guide reference: IRFC430B
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 500 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 1.5 |
| Continuous Drain Current · ID · 25℃ (A) | 3.1 |
| Continuous Drain Current · ID · 100℃(A) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 4 |
| Total Gate Charge · QG · Max (nc) | 38 |
| Input Capacitance · CISS · (pF) | 610 |
| Junction Temperature · TJ · (℃) | 150 |
Selection guide reference: IRFC430N
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 500 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 1.5 |
| Continuous Drain Current · ID · 25℃ (A) | 4.5 |
| Continuous Drain Current · ID · 100℃(A) | 2.9 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 4 |
| Total Gate Charge · QG · Max (nc) | 38 |
| Input Capacitance · CISS · (pF) | 610 |
| Junction Temperature · TJ · (℃) | 150 |