BARE DIE & WAFER INVENTORY
IRFC3810B
- Manufacturer
- IR
- Format
- Die & Wafer
- Dimensions
- 305 × 370 mil (guide)
N-Channel MOSFET
Parameters
Selection guide reference: IRFC3810B
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 100 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.009 |
| Continuous Drain Current · ID · 25℃ (A) | 170 |
| Continuous Drain Current · ID · 100℃(A) | 120 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 3 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 5 |
| Total Gate Charge · QG · Max (nc) | 390 |
| Input Capacitance · CISS · (pF) | 6790 |
| Junction Temperature · TJ · (℃) | 175 |