BARE DIE & WAFER INVENTORY
IRFC260NB
- Manufacturer
- IR
- Format
- Die & Wafer
- Dimensions
- 181 × 303 mil (guide)
N-Channel MOSFET
Parameters
Selection guide reference: IRFC260B
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 200 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.06 |
| Continuous Drain Current · ID · 25℃ (A) | 45 |
| Continuous Drain Current · ID · 100℃(A) | 29 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 4 |
| Total Gate Charge · QG · Max (nc) | 230 |
| Input Capacitance · CISS · (pF) | 5100 |
| Junction Temperature · TJ · (℃) | 150 |
Selection guide reference: IRFC260N
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 200 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.04 |
| Continuous Drain Current · ID · 25℃ (A) | 50 |
| Continuous Drain Current · ID · 100℃(A) | 35 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 4 |
| Total Gate Charge · QG · Max (nc) | 234 |
| Input Capacitance · CISS · (pF) | 4057 |
| Junction Temperature · TJ · (℃) | 175 |