BARE DIE & WAFER INVENTORY
IRFC250B
- Manufacturer
- VISHAY
- Format
- Die & Wafer
- Dimensions
- 236 × 240 mil / 170 × 170 mil (guide)
N-Channel MOSFET
Parameters
Selection guide reference: IRFC250B
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 200 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.085 |
| Continuous Drain Current · ID · 25℃ (A) | 30 |
| Continuous Drain Current · ID · 100℃(A) | 19 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 4 |
| Total Gate Charge · QG · Max (nc) | 140 |
| Input Capacitance · CISS · (pF) | 2800 |
| Junction Temperature · TJ · (℃) | 150 |
Selection guide reference: IRFC250N
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 200 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.075 |
| Continuous Drain Current · ID · 25℃ (A) | 30 |
| Continuous Drain Current · ID · 100℃(A) | 21 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 4 |
| Total Gate Charge · QG · Max (nc) | 123 |
| Input Capacitance · CISS · (pF) | 2159 |
| Junction Temperature · TJ · (℃) | 175 |