BARE DIE & WAFER INVENTORY
IRFC130NB
- Manufacturer
- IR
- Format
- Die & Wafer
- Dimensions
- 106 × 148 mil / 87 × 121 mil (guide)
N-Channel MOSFET
Parameters
Selection guide reference: IRFC130B
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 100 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.16 |
| Continuous Drain Current · ID · 25℃ (A) | 9.7 |
| Continuous Drain Current · ID · 100℃(A) | 6.9 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 4 |
| Total Gate Charge · QG · Max (nc) | 33 |
| Input Capacitance · CISS · (pF) | 670 |
| Junction Temperature · TJ · (℃) | 175 |
Selection guide reference: IRFC130N
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 100 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.115 |
| Continuous Drain Current · ID · 25℃ (A) | 16 |
| Continuous Drain Current · ID · 100℃(A) | 12 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 4 |
| Total Gate Charge · QG · Max (nc) | 44 |
| Input Capacitance · CISS · (pF) | 640 |
| Junction Temperature · TJ · (℃) | 175 |