BARE DIE & WAFER INVENTORY
IRFC120B
- Manufacturer
- IR
- Format
- Die & Wafer
- Dimensions
- 82 × 115 mil / 69 × 91 mil (guide)
N-Channel MOSFET
Parameters
Selection guide reference: IRFC120B
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 100 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.27 |
| Continuous Drain Current · ID · 25℃ (A) | 1.3 |
| Continuous Drain Current · ID · 100℃(A) | 0.94 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 4 |
| Total Gate Charge · QG · Max (nc) | 16 |
| Input Capacitance · CISS · (pF) | 360 |
| Junction Temperature · TJ · (℃) | 175 |
Selection guide reference: IRFC120N
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 100 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.21 |
| Continuous Drain Current · ID · 25℃ (A) | 9.4 |
| Continuous Drain Current · ID · 100℃(A) | 6.6 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 4 |
| Total Gate Charge · QG · Max (nc) | 25 |
| Input Capacitance · CISS · (pF) | 330 |
| Junction Temperature · TJ · (℃) | 175 |