BARE DIE & WAFER INVENTORY
IRFC024NB
- Manufacturer
- Infineon
- Format
- Die & Wafer
- Dimensions
- 102 × 126 mil / 66 × 85 mil (guide)
N-Channel MOSFET
Parameters
Selection guide reference: IRFC024B
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 60 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.1 |
| Continuous Drain Current · ID · 25℃ (A) | 14 |
| Continuous Drain Current · ID · 100℃(A) | 10 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 4 |
| Total Gate Charge · QG · Max (nc) | 25 |
| Input Capacitance · CISS · (pF) | 640 |
| Junction Temperature · TJ · (℃) | 175 |
Selection guide reference: IRFC024N
N-Channel MOSFET
| Parameter / condition / unit | Guide value |
|---|---|
| Drain-Source Breakdown Voltage · BVDSS · (V) | 55 |
| Drain-Source On-State Resistance · RDS(on) · (Ω) | 0.07 |
| Continuous Drain Current · ID · 25℃ (A) | 14 |
| Continuous Drain Current · ID · 100℃(A) | 10 |
| Gate-Source Threshold Voltage · VGS(th) · Min (V) | 2 |
| Gate-Source Threshold Voltage · VGS(th) · Max (V) | 4 |
| Total Gate Charge · QG · Max (nc) | 20 |
| Input Capacitance · CISS · (pF) | 370 |
| Junction Temperature · TJ · (℃) | 175 |