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IRFC014B

Manufacturer
IR
Format
Die & Wafer
Dimensions
76 × 86 mil (guide)

N-Channel MOSFET

Parameters

Selection guide reference: IRFC014B

N-Channel MOSFET

9 parameters
Selection guide parameters for IRFC014B, a reference for IRFC014B
Parameter / condition / unitGuide value
Drain-Source Breakdown Voltage · BVDSS · (V)60
Drain-Source On-State Resistance · RDS(on) · (Ω)0.2
Continuous Drain Current · ID · 25℃ (A)8
Continuous Drain Current · ID · 100℃(A)5.7
Gate-Source Threshold Voltage · VGS(th) · Min (V)2
Gate-Source Threshold Voltage · VGS(th) · Max (V)4
Total Gate Charge · QG · Max (nc)11
Input Capacitance · CISS · (pF)300
Junction Temperature · TJ · (℃)175

Selection guide reference: IRFC014N

N-Channel MOSFET

9 parameters
Selection guide parameters for IRFC014N, a reference for IRFC014B
Parameter / condition / unitGuide value
Drain-Source Breakdown Voltage · BVDSS · (V)60
Drain-Source On-State Resistance · RDS(on) · (Ω)0.2
Continuous Drain Current · ID · 25℃ (A)2.7
Continuous Drain Current · ID · 100℃(A)1.7
Gate-Source Threshold Voltage · VGS(th) · Min (V)2
Gate-Source Threshold Voltage · VGS(th) · Max (V)4
Total Gate Charge · QG · Max (nc)11
Input Capacitance · CISS · (pF)300
Junction Temperature · TJ · (℃)150
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