BARE DIE & WAFER INVENTORY
CPW4-1200-S010B
- Manufacturer
- CREE
- Format
- Die
- Dimensions
- 89 × 89 mil (guide)
SiC Schottky Diode
Parameters
Selection guide reference: CPW4-1200-S010B
SiC Schottky Diode
| Parameter / condition / unit | Guide value |
|---|---|
| Repetitive Peak Reverse Voltage · VRRM · (V) | 1200 |
| Average Forward Current · IF · (A) | 10 |
| Repetitive Peak Forward Surge Current · IFRM · (A) | 47 |
| Max Reverse Leakage Current · IFRM · (μA) | 250 |
| Max Forward Voltage · VF · (V) | 1.8 |
| Max Operating Junction Temperature · TJ · (℃) | 175 |
| Total Capacitive Charge · QC · (nc) | 66 |