BARE DIE & WAFER INVENTORY
2N5115
- Manufacturer
- FCH
- Format
- Die
- Dimensions
- On request
JFET
Parameters
Selection guide reference: 2N5115
JFET
| Parameter / condition / unit | Guide value |
|---|---|
| Power Dissipation · PT · (W) | 0.5 |
| Gate Operating Current · IG · (mA) | 50 |
| Gate-Source Breakdown Voltage · V(BR)GSS · (V) | 30 |
| Saturation Drain Current · IDSS · Min(mA) | -15 |
| Saturation Drain Current · IDSS · Max(mA) | -60 |
| Gate-Source Cutoff Voltag · VGS(OFF) · Min(V) | 3 |
| Gate-Source Cutoff Voltag · VGS(OFF) · Max(V) | 6 |
| Drain-Source On-Resistance · RDS(on) · (Ω) | 100 |
| Common-Source Input Capacitance · CISS · Max(pF) | 25 |
| Common-Source Reverse Transfer Capacitance · CRSS · Max(pF) | 7 |
| Junction Temperature · TJ · (℃) | 200 |