INN650N080BS

Manufacturer: Innoscience
Category: GaN Power Transistors
Supply Format: Bare die

Description

650 V enhancement-mode GaN-on-silicon power transistor in bare die form, with 80 mΩ maximum on-resistance at 6 V gate drive.

Cross Reference

GaN Systems / Infineon · GS66506TFunctional comparison · Engineering review required

Both are 650 V enhancement-mode GaN power switches. GS66506T is a packaged device rated at 90 mΩ maximum and 22.5 A. Current, gate charge, assembly and thermal design differ; this is not a verified direct replacement.

Stock: Checking stock…

Electrical Datasheet (PDF)Contact Support

Die Physical Data

INN650N080BS die physical data
Die dimensions, including scribe line	2.933 × 3.020 mm
Scribe street width	100 µm
Top metallization	Al-Cu, 3.5 µm
Gate pad openings	G1 and G2: 145 × 145 µm each (PI top opening)
Bond pads	2 gate, 2 drain, 3 source
Backside	Silicon

Product Specifications

INN650N080BS product specifications
Technology	Enhancement-mode GaN on silicon
Drain-source voltage	650 V
On-resistance	60 mΩ typical / 80 mΩ maximum at VGS = 6 V, ID = 8 A, Tj = 25 °C
Gate charge	6.2 nC typical at VDS = 400 V, VGS = 0–6 V, ID = 8 A
Continuous drain current	29 A at Tc = 25 °C
Operating junction temperature	−55 to +150 °C